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MRF557 APT RF and Microwave Discrete Low Power Transistor 12.5 V 870 MHz 1.5 W (NOS)

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Designed primarily for wideband large signal stages in the UHF frequency range.



  • Specified @ 12.5 V, 870 MHz Characteristics: Output Power = 1.5 W, Minimum Gain = 8 dB, Efficiency 60% (Typ)

  • Cost Effective PowerMacro Packa

  • Electroless Tin Plated Leads for Improved Solderability


New Old Stock * No longer available for export
MRF: APT
SKU: MRF557-APT


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Details

MRF557 APT RF and Microwave Discrete Low Power Transistor 12.5 V 870 MHz 1.5 W (NOS)

Designed primarily for wideband large signal stages in the UHF frequency range.

  • Specified @ 12.5 V, 870 MHz Characteristics: Output Power = 1.5 W, Minimum Gain = 8 dB, Efficiency 60% (Typ)
  • Cost Effective PowerMacro Packa
  • Electroless Tin Plated Leads for Improved Solderability

New Old Stock * No longer available for export
MRF: APT

 

 

Additional Information

Featured Product No
Made in the USA No
GTIN No
ISBN No
NATO Stock Number No
Manufacturer Part Number No
Manufacturer Advanced Power Technology
Condition New
NOS No
Call For Price No
Manufacturer Name FUTURE ELECTRONICS CORP

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