Details
MRF557 APT RF and Microwave Discrete Low Power Transistor 12.5 V 870 MHz 1.5 W (NOS)
Designed primarily for wideband large signal stages in the UHF frequency range.
- Specified @ 12.5 V, 870 MHz Characteristics: Output Power = 1.5 W, Minimum Gain = 8 dB, Efficiency 60% (Typ)
- Cost Effective PowerMacro Packa
- Electroless Tin Plated Leads for Improved Solderability
New Old Stock * No longer available for export
MRF: APT
Additional Information
Featured Product | No |
---|---|
Made in the USA | No |
GTIN | No |
ISBN | No |
NATO Stock Number | No |
Manufacturer Part Number | No |
Manufacturer | Advanced Power Technology |
Condition | New |
NOS | No |
Call For Price | No |
Manufacturer Name | FUTURE ELECTRONICS CORP |