Details
NTE338 NTE Silicon NPN Transistor 20W (NOS)
- RF Power Amplifier Driver
- Collector−Emitter Voltage, VCEO: 24V
- Collector−Base Voltage, VCB: 48V
- Emitter−Base Voltage, VEB: 4V
- Collector Current, IC: 3.5A
- Base Current, IB: 0.5A
- Total Device Dissipation, PD: 50W
- Operating Junction Temperature Range, TJ: −65° to +200°C
- Storage Temperature Range, Tstg: −65° to +200°C
New OLd Stock * No longer available for export
MFR: NTE338
Additional Information
| Featured Product | No |
|---|---|
| Made in the USA | No |
| GTIN | No |
| ISBN | No |
| NATO Stock Number | No |
| Manufacturer Part Number | No |
| Manufacturer | No |
| Condition | New |
| NOS | No |
| Call For Price | No |
| Manufacturer Name | NTE Electronics, Inc. |
Product Attachments
| NTE338 |  67.38 KB |
Download |
