Details
PH1819-10 Philips Bipolar Power Transistor 1,78-1.90 GHz (NOS)
- Designed for Cellular Base Station Applications
- -30dBc Typical 3rd IMD at 1o Watts PEP
- Common Emitter Configuration
- Internal Input Impedance Matching
- Diffused Emitter Ballasting
- Collector-Base Voltage: 65v
- Power Dissipation: 44W
New Old Stock * No longer vailable for export
MFR: Philips
Additional Information
Featured Product | No |
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Made in the USA | No |
GTIN | No |
ISBN | No |
NATO Stock Number | No |
Manufacturer Part Number | No |
Manufacturer | No |
Condition | New |
NOS | No |
Call For Price | No |
Manufacturer Name | No |