RD00HHS1 Mitsubishi Silicon (Discrete) MOSFET RF Power Transistor 30 MHz 0.3W (NOS)

RD00HHS1 Mitsubishi RoHS Compliance Silicon MOSFET Power Transistor 30 MHz 0.3 Watts (NOS)

New Old Stock * No longer available for export
MFR: Mitsubishi, Japan

DESCRIPTION:
RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications.

FEATURES:
High power gain
Pout>0.3W, Gp>19dB @Vdd=12.5V, f=30MHz

APPLICATION:
For output stage of high power amplifiers in HF Band mobile radio sets.
RoHS COMPLIANT
RD00HHS1-101,T113 is a RoHS compliant products.

This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1. Lead in high melting temperature type solders (i.e.tin-lead solder alloys containing more than 85% lead.