Details
RD07MVS1-T112 Mitsubishi MOSFET Power Transistor 175MHz 520MHz 7W (NOS)
New Old Stock * No longer available for export
MFR: Mitsubishi
RD07MVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.
- High power gain: Pout>7W, Gp>10dB@Vdd=7.2V,f=520MHz High Efficiency: 60%typ. (175MHz) High Efficiency: 55%typ. (520MHz)
- For output stage of high power amplifiers in VHF/UHF band mobile radio sets.
- RD07MVS1-101, T112 is a RoHS compliant product. RoHS compliance is indicating by the letter “G” after the Lot Marking.
This product includes the lead in high melting temperature type solders. However, it is applicable to the following exceptions of RoHS Directions.
"Lead in high melting temperature type solders (i.e.tin-lead solder alloys containing more than 85% lead."
Additional Information
| Featured Product | No |
|---|---|
| Made in the USA | No |
| GTIN | No |
| ISBN | No |
| NATO Stock Number | No |
| Manufacturer Part Number | No |
| Manufacturer | Mitsubishi |
| Condition | New |
| NOS | No |
| Call For Price | No |
| Manufacturer Name | Mitsubishi |
Product Attachments
| rd07mvs1 |  447.85 KB |
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