Details
RD07MVS1B-T212 Mitsubishi RoHS Compliance Silicon MOSFET Power Transistor 175MHz 520MHz 7W (NOS)
New Old Stock * No longer available for export
MFR: Mitsubishi
DESCRIPTION
RD07MVS1B is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.
RD07MVS1B improved a drain surge than RD07MVS1 by optimizing MOSFET structure.
FEATURES
High power gain: Pout>7W, Gp>10dB @Vdd=7.2V,f=520MHz
High Efficiency: 60%typ. (175MHz) High Efficiency: 55%typ. (520MHz)
APPLICATION
For output stage of high power amplifiers in VHF/UHF band mobile radio sets.
RoHS COMPLIANT
RD07MVS1B-101, T212 is a RoHS compliant product. RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high melting temperature type solders. However, it is applicable to the following exceptions of RoHS Directions.
1. Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead)
Additional Information
| Featured Product | No |
|---|---|
| Made in the USA | No |
| GTIN | No |
| ISBN | No |
| NATO Stock Number | No |
| Manufacturer Part Number | No |
| Manufacturer | Mitsubishi |
| Condition | New |
| NOS | No |
| Call For Price | No |
| Manufacturer Name | Mitsubishi |
Product Attachments
| rd07mvs1b |  441.2 KB |
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