Details
RD100HHF1C Mitsubishi Silicon MOSFET Power Transistor 30MHz 100W 12.5V
The RD100HHF1C-501 is a MOSFET (metal-oxide-semiconductor field-effect transistor) power transistor produced by Mitsubishi Electric. MOSFETs are semiconductor devices commonly used in electronic circuits as switches or amplifiers.
In this case, the RD100HHF1C-501 is a power transistor designed for use in high-frequency applications, with a maximum operating frequency of 30MHz. It is capable of handling up to 100 watts of power and operates at a voltage of 12.5V.
Overall, the RD100HHF1C-501 is a high-performance transistor suitable for use in a variety of applications where high-power and high-frequency operation are required, such as in radio transmitters, RF amplifiers, and other communications equipment.
- RD100HHF1C is a MOS FET Silicon type transistor specifically designed for HF High power amplifiers applications.
- High power and High Gain: Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz High Efficiency: 60% typicalon HF Band.
- For output stage of high power amplifiers in HF Band mobile radio sets.
- RD100HHF1C-501 is a RoHS compliant products.
MFR: Mitsubishi
Made in Japan
Additional Information
| Featured Product | Yes |
|---|---|
| Made in the USA | No |
| GTIN | No |
| ISBN | No |
| NATO Stock Number | No |
| Manufacturer Part Number | No |
| Manufacturer | Mitsubishi |
| Condition | New |
| NOS | No |
| Call For Price | No |
| Manufacturer Name | Mitsubishi |
