Details
RD12MVS1-T112 Mitsubishi RoHS Compliance Silicon MOSFET Power Transistor 175MHz 12W (NOS)
New Old Stock * No longer available for export
MFR: Mitsubishi
DESCRIPTION
RD12MVS1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
FEATURES
High Power Gain: Pout>11.5W, Gp>12dB@Vdd=7.2V,f=175MHz High Efficiency: 57%typ. (175MHz)
APPLICATION
For output stage of high power amplifiers in VHF band mobile radio sets.
RoHS COMPLIANT
RD12MVS1-101,T112 is a RoHS compliant products. RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high melting temperature type solders. However, it is applicable to the following exceptions of RoHS Directions.
1. Lead in high melting temperature type solders (i.e.tin-lead older alloys containing more than85% lead.)
Additional Information
| Featured Product | No |
|---|---|
| Made in the USA | No |
| GTIN | No |
| ISBN | No |
| NATO Stock Number | No |
| Manufacturer Part Number | No |
| Manufacturer | Mitsubishi |
| Condition | New |
| NOS | No |
| Call For Price | No |
| Manufacturer Name | Mitsubishi |
Product Attachments
| rd12mvs1 |  586 KB |
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