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RD16HHF1-501 Mitsubishi Silicon MOSFET Power Transistor16W 30 MHz 12.5V

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$7.91
Out of Stock

We expect stock to arrive by November 2021


DESCRIPTION: RD16HHF1 is a MOS FET transistor specifically designed for HF, RF power amplifiers applications.
FEATURES: High power gain: Pout>16 W, Gp>16 dB @Vdd=12.5 V,f=30 MHz.
APPLICATION: For output stage of high power amplifiers in HF band.


MFR: Mitsubishi, Japan
SKU: RD16HHF1-501


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Details

RD16HHF1-501 Mitsubishi Silicon MOSFET Power Transistor16W 30 MHz 12.5V RoHS Compliant

DESCRIPTION: RD16HHF1 is a MOS FET transistor specifically designed for HF, RF power amplifiers applications.

FEATURES: High power gain: Pout>16 W, Gp>16 dB @Vdd=12.5 V,f=30 MHz.

APPLICATION: For output stage of high power amplifiers in HF band.

RoHS COMPLIANT
RD16HHF1-501 is a RoHS compliant product.
This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions: .Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)

MFR: Mitsubishi, Japan

Additional Information

Featured Product Yes
Made in the USA No
Manufacturer Mitsubishi
NOS No
Call For Price No
Manufacturer Name Mitsubishi

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