RD16HHF1-501 Mitsubishi Silicon MOSFET Power Transistor 16W 30 MHz 12.5V RoHS Compliant
RD16HHF1 is a MOS FET transistor specifically designed for HF, RF power amplifiers applications.
The RD16HHF1-501 is a power transistor designed and manufactured by Mitsubishi Electric, and it is part of their MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) product line.
This particular transistor is capable of handling up to 16 watts of power and operates at a voltage of 12.5V. It is well-suited for use in applications where moderate power levels are required, such as in radio frequency amplifiers and other communication equipment.
The transistor can operate at frequencies of up to 30 MHz, making it suitable for use in high-frequency applications. The MOSFET technology used in this transistor allows for fast switching and low power dissipation, which is desirable in high-frequency applications.
The RD16HHF1-501 is a reliable and efficient power transistor that offers a good balance of power handling and frequency range. It is a popular choice for use in a variety of applications, such as in amateur radio and other communication systems where reliable and efficient power amplification is required.
FEATURES: High power gain: Pout>16 W, Gp>16 dB @Vdd=12.5 V,f=30 MHz.
APPLICATION: For output stage of high power amplifiers in HF band.
RD16HHF1-501 is a RoHS compliant product. This product includes the lead in high melting temperature type solders. However, it is applicable to the following exceptions of RoHS Directions: .Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than 85% lead.)
MFR: Mitsubishi, Japan
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