RD16HHF1-501 Mitsubishi Silicon MOSFET Power Transistor16W 30 MHz 12.5V RoHS Compliant
DESCRIPTION: RD16HHF1 is a MOS FET transistor specifically designed for HF, RF power amplifiers applications.
FEATURES: High power gain: Pout>16 W, Gp>16 dB @Vdd=12.5 V,f=30 MHz.
APPLICATION: For output stage of high power amplifiers in HF band.
RD16HHF1-501 is a RoHS compliant product.
This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions: .Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
MFR: Mitsubishi, Japan
|Made in the USA||No|
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