RD20HMF1 Mitsubishi RoHS Compliance Silicon MOSFET Power Transistor 900MHz 20W (NOS)
New Old Stock * No longer available for export
RD20HMF1 is a MOS FET type transistor specifically designed for 900MHz-band RF power amplifiers applications.
High power gain: Pout>20W, Gp>8.2dB @Vdd=12.5V,f=900MHz High Efficiency: 55%typ.
For output stage of high power amplifiers in 900MHz band Mobile radio sets.
RD20HMF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the Lot Marking.
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