RD30HVF1 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W
MFR: Mitsubishi (LIMITED QUANTITY AVAILABLE)
NOTE: DISCONTINUED 2017 (SEE SUBSTITUTE RD35HUP2)
RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
High power gain: Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz High Efficiency: 60%typ.
For output stage of high power amplifiers in VHF band Mobile radio sets.
RD30HVF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the Lot Marking.
|Made in the USA||No|
|Manufacturer||Mitsubishi (LIMITED QUANTITY AVAILABLE)|