RD30HVF1-101 Mitsubishi RoHS Compliant Silicon MOSFET Power Transistor 175MHz 30W (NOS)
New Old Stock * No longer available for export
NOTE: DISCONTINUED 2017
RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
High power gain: Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz High Efficiency: 60%typ.
For output stage of high power amplifiers in VHF band Mobile radio sets.
RD30HVF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the Lot Marking.
|Made in the USA||No|
|Manufacturer||Mitsubishi (LIMITED QUANTITY AVAILABLE)|
|Call For Price||No|