Details
RD35HUP2-501 Mitsubishi RoHS Compliance Silicon MOSFET Power Transistor 175/530 MHz 35 Watt 12.5 Volts
MFR: Mitsubishi
NOTE: SUBSTITUTE FOR RD30HVF1
| Parameter | Level | Value | Unit |
|---|---|---|---|
| Supply situation | Under development | ||
| Drain Voltage | Typ | 12.5 | V |
| Freqency | 175 / 530 | MHz | |
| Output Power (Min) | 35(typ) | W | |
| Package | HPM | ||
| Input Power (Typ) | 3 | W | |
| Drain Efficiency (Min) | 55(typ) | % | |
| Feature | built in Gate Protection Diode | ||
| RoHS Directive | 2011/65/EU RoHS2 Compliant |
Additional Information
| Featured Product | No |
|---|---|
| Made in the USA | No |
| GTIN | No |
| ISBN | No |
| NATO Stock Number | No |
| Manufacturer Part Number | No |
| Manufacturer | No |
| Condition | New |
| NOS | No |
| Call For Price | No |
| Manufacturer Name | Mitsubishi |
Product Attachments
| RD35HUF2 |  993.32 KB |
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