Details
RD70HHF1-101 Mitsubishi Silicon MOS FET (Discrete) Power Transistor 30 MHz 70W 12.5V (NOS)
New Old Stock * No longer available for export End Of Life 2017
MFR: Mitsubishi
DESCRIPTION
RD70HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.
FEATURES
High power and High Gain: Pout>70W, Gp>13dB @Vdd=12.5V,f=30MHz High Efficiency: 60%typ.on HF Band
APPLICATION
For output stage of high power amplifiers in HF
Band mobile radio sets.
RoHS COMPLIANT
RD70HHF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the lot marking.
Additional Information
| Featured Product | No |
|---|---|
| Made in the USA | No |
| GTIN | No |
| ISBN | No |
| NATO Stock Number | No |
| Manufacturer Part Number | No |
| Manufacturer | Mitsubishi |
| Condition | New |
| NOS | Yes |
| Call For Price | No |
| Manufacturer Name | Mitsubishi |
Product Attachments
| rd70hhf1 |  582.99 KB |
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