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RD70HHF1 Mitsubishi Silicon MOSFET Power Transistor 70W 30 MHz 12.5V (NOS)

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$59.91
In Stock
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DESCRIPTION
RD70HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.
FEATURES
High power and High Gain:  Pout>70W, Gp>13dB @Vdd=12.5V,f=30MHz  High Efficiency: 60%typ.on HF Band
APPLICATION
For output stage of high power amplifiers in HF
Band mobile radio sets.
RoHS COMPLIANT
RD70HHF1-101 is a RoHS compliant products.  RoHS compliance is indicate by the letter “G” after the lot marking.


New Old Stock * No longer available for export * End Of Life 2017
MFR: Mitsubishi, Japan
SKU: RD70HHF1


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Details

RD70HHF1-101 Mitsubishi Silicon MOS FET (Discrete) Power Transistor 30 MHz 70W 12.5V (NOS)

New Old Stock * No longer available for export  End Of Life 2017
MFR: Mitsubishi

DESCRIPTION
RD70HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.
FEATURES
High power and High Gain:  Pout>70W, Gp>13dB @Vdd=12.5V,f=30MHz  High Efficiency: 60%typ.on HF Band
APPLICATION
For output stage of high power amplifiers in HF
Band mobile radio sets.
RoHS COMPLIANT
RD70HHF1-101 is a RoHS compliant products.  RoHS compliance is indicate by the letter “G” after the lot marking.

Additional Information

Featured Product No
Made in the USA No
Manufacturer Mitsubishi
NOS Yes
Call For Price No
Manufacturer Name Mitsubishi

Product Attachments

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