RD70HHF1-101 Mitsubishi Silicon MOS FET (Discrete) Power Transistor 30 MHz 70W 12.5V (NOS)
New Old Stock * No longer available for export End Of Life 2017
RD70HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.
High power and High Gain: Pout>70W, Gp>13dB @Vdd=12.5V,f=30MHz High Efficiency: 60%typ.on HF Band
For output stage of high power amplifiers in HF
Band mobile radio sets.
RD70HHF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the lot marking.
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