RFM04U6P Toshiba Transistor 4.3 watt 13.3dB Surface Mount (NOS)
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In Stock
Transistor 4.3 watt 13.3dB Surface Mount
New Old Stock * No longer available for export
MFR: Toshiba
SKU: RFM04U6P
Details
RFM04U6P Toshiba Transistor FET, Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications
(Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this document except for high frequency Power Amplifier of telecommunications equipment.
- Output power: PO = 4.3W (typ)
- Gain: GP = 13.3dB (typ)
- Drain efficiency: ηD = 70% (typ)
New Old Stock * No longer available for export
MFR: Toshiba
See Data Sheet for more information
Additional Information
| Featured Product | No |
|---|---|
| Made in the USA | No |
| GTIN | No |
| ISBN | No |
| NATO Stock Number | No |
| Manufacturer Part Number | No |
| Manufacturer | Toshiba |
| Condition | New |
| NOS | Yes |
| Call For Price | No |
| Manufacturer Name | TOSHIBA AMERICA ELECTRONICS COMPONENTS |
Datasheets
| Type | File | Size | Description |
|---|---|---|---|
 |
Download | 214.64 KB |
|
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