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RFM12U7X Toshiba Surface Mount Field Effect Transistor 12w 10.8dB (NOS)

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  • Output power: PO  = 12 W (typ.)

  • Gain: GP  = 10.8 dB (typ.)

  • Drain efficiency: ηD  = 60% (typ.)


New Old Stock * No longer available for export
MFR: Toshiba Electronics
SKU: RFM12U7X


Data Sheet


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Details

RFM12U7X Toshiba Surface Mount Field Effect Transistor 12w 10.8dB  (NOS)

VHF- and UHF-band Amplifier Applications (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These TOSHIBA products are neither intended nor warranted for any other use. Do not use these TOSHIBA products listed in this document except for high frequency Power Amplifier of telecommunications equipment.

• Output power: PO  = 12 W (typ.)
• Gain: GP  = 10.8 dB (typ.)
• Drain efficiency: ηD  = 60% (typ.)

New Old Stock * No longer available for export
MFR: Toshiba Electronics

Data Sheet

 

 

 

 

Additional Information

Featured Product No
Made in the USA No
GTIN No
ISBN No
NATO Stock Number No
Manufacturer Part Number No
Manufacturer No
Condition New
NOS Yes
Call For Price No
Manufacturer Name Toshiba Electronics

Product Attachments

RFM12U7X pdf 191.46 KB Download

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