Details
TIP41C Samsung NPN Bipolar Power Transistor
- Transistor Polarity: NPN
- Maximum Collector Emitter Voltage: 100 V
- Maximum Collector Base Voltage: 100 V
- Minimum DC Current Gain: 15 @ 3A
- Power Dissipation: 2000mW
- Configuration: Single
- Maximum Collector Emitter Saturation Voltage: 1.5V@600mA@6A
- Number of Elements per Chip: 1
- Output Power: 2000mW
- Product Type: Bipolar Power
- Maximum Emitter Base Voltage: 5V
- Maximum Base Emitter Saturation Voltage: 2.0V@6A@4V
- Maximum Operating Frequency: 3MHz
- Maximum Collector Current: 6A
- Minimum Operating Temperature: -65°C
- Maximum Operating Temperature: 150°C
- Mounting: Through Hole
MFR: Samsung
Additional Information
| Featured Product | No |
|---|---|
| Made in the USA | No |
| GTIN | No |
| ISBN | No |
| NATO Stock Number | No |
| Manufacturer Part Number | No |
| Manufacturer | No |
| Condition | New |
| NOS | No |
| Call For Price | No |
| Manufacturer Name | Samsung |