Details
2N396A GE PNP Germanium Transistor (NOS)
Used in Medium-speed switching applications in data-processing qeuipment.
- Material of Transistor: Ge
- Polarity: PNP
- Maximum Collector Power Dissipation (Pc): 0.15 W
- Maximum Collector-Base Voltage |Vcb|: 30 V
- Maximum Collector-Emitter Voltage |Vce|: 20 V
- Maximum Emitter-Base Voltage |Veb|: 20 V
- Maximum Collector Current |Ic max|: 0.2 A
- Max. Operating Junction Temperature (Tj): 100 °C
- Transition Frequency (ft): 4 MHz
- Collector Capacitance (Cc): 24 pF
- Forward Current Transfer Ratio (hFE), MIN: 30
New Old Stock * No longer available for export
MFR: GE (for USN)
Additional Information
| Featured Product | No |
|---|---|
| Made in the USA | No |
| GTIN | No |
| ISBN | No |
| NATO Stock Number | No |
| Manufacturer Part Number | No |
| Manufacturer | No |
| Condition | New |
| NOS | No |
| Call For Price | No |
| Manufacturer Name | General Electric Company |