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Transistors - RF, Mosfets, Misc.

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  1. 4N25   6 Pin Dip Optoisolaters Transistor output

    4N25 6 Pin Dip Optoisolaters Transistor output

    $0.75

    4N25   6 Pin Dip Optoisolaters Transistor output

  2. IRF510 N-Channel Power MOSFET Transistor 5.6A 100V 0.540 Ohm

    IRF510 N-Channel Power MOSFET Transistor 5.6A 100V 0.540 Ohm

    $1.91

    IRF510 Transistor, 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET

  3. MRF171A  M/A-COM Transistor RF MOSFET 45W 150MHz 28V (NOS)

    MRF171A M/A-COM Transistor RF MOSFET 45W 150MHz 28V (NOS)

    $53.91

    Designed primarily for wideband large–signal output and driver stages from 30–200 MHz, N–Channel enhancement mode MOSFET

    • Guaranteed performance at 150 MHz, 28 Vdc, Output power = 45 W, Power gain = 17 dB (min), Efficiency = 60% (min)
    • Excellent thermal stability, ideally suited for Class A operation
    • Facilitates manual gain control, ALC and modulation techniques
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR
    • Low Crss – 8 pF @ VDS = 28 V
    • Gold top metal, Typical data for power amplifier applications in industrial, commercial and amateur radio equipment
    • Typical performance at 30 MHz, 28 Vdc, Output power = 30 W (PEP), Power gain = 20 dB (typ.), Efficiency = 50% (typ.), IMD(d3) (30 W PEP) –32 dB (typ.)

    Parts we have available are early version just after Motorola sold to M/A-COM.  All parts in stock are produced with original Motorola die. 

    New Old Stock * No longer available for export
    MFR: M/A-COM
    SKU: MRF171A-MA

  4. 2SC2782A Toshiba NPN Silicon Epitaxial Planar Transistor Matched Pair (2) (NOS)

    2SC2782A Toshiba NPN Silicon Epitaxial Planar Transistor Matched Pair (2) (NOS)

    $129.91

    The 2SC2782A is an NPN bipolar junction transistor (BJT) designed and manufactured by Toshiba Corporation. It is a silicon epitaxial planar transistor that is commonly used in various electronic applications, particularly in high-frequency and high-power amplifier circuits.

    The 2SC2782A transistor is a high-quality and reliable component that offers excellent performance in a wide range of electronic applications. Its high current gain, low noise figure, high cutoff frequency, and low parasitic capacitance make it a popular choice for use in various high-frequency and high-power amplifier circuits.

    For a Matched Quad (4), simply order Two Pairs
    MFR: Toshiba, Japan
    New Old Stock * No Longer Available for Export
    SKU: 2SC2782A-MP

  5. 2N3771G ON Semiconductor Transistor NPN 40V 30A (NOS)

    2N3771G ON Semiconductor Transistor NPN 40V 30A (NOS)

    High Power NPN Silicon Power Transistors These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications.

    Features • Forward Biased Second Breakdown Current Capability IS/b = 3.75 Adc @ VCE = 40 Vdc − 2N3771 = 2.5 Adc @ VCE = 60 Vdc − 2N3772 • These Devices are Pb−Free and are RoHS Compliant

    MFR: ON Semiconductors

    &nbs2N3771G ON Semiconductor Transistor NPN 40V 30Ap;SKU: 2N3771G-ON

  6. 2N3055 RCA  60v 15A NPN Silicon Transistor (NOS)

    2N3055 RCA 60v 15A NPN Silicon Transistor (NOS)

    $5.91

    Designed for general purpose switching and amplifier applications.

    • Max voltage: 60V.
    • Max current: 15 Amp collector, 7 Amp base.
    • Dissipation: 115 watt.
    • Package: TO-3 steel.

    New Old Stock * No longer available for export
    MFR: RCA
    SKU: 2N3055-RCA

  7. PN3646 Fairchild NPN Bipolar Transistor (NOS)

    PN3646 Fairchild NPN Bipolar Transistor (NOS)

    $1.91

    • Collector- Emitter Voltage VCEO Max: 15 V
    • Collector- Base Voltage VCBO: 40 V
    • Emitter- Base Voltage VEBO: 5 V
    • Collector-Emitter Saturation Voltage: 500 mV
    • Maximum DC Collector Current: 300 mA
    • Power Dissipation: 350 mW

    New Old Stock * No longer available for export
    MFR: Fairchild
    SKU: PN3646

  8. 2N5490 GE/RCA NPN Transistor (NOS)

    2N5490 GE/RCA NPN Transistor (NOS)

    $12.91

    • Collector-Emitter Voltage: 40 V
    • Collector-Base Voltage: 60 V
    • Emitter-Base Voltage: 5 V
    • Collector Current: 7 A

    New Old Stock * No longer available for export
    MFR: GE/RCA
    SKU: 2N5490

  9. 2N6246 GE/RCA PNP Transistor 60v 125w 10MHz (NOS)

    2N6246 GE/RCA PNP Transistor 60v 125w 10MHz (NOS)

    $18.91

    • Maximum Collector Power Dissipation (Pc): 125 W
    • Maximum Collector-Emitter Voltage |Vce|: 60 V
    • Max. Operating Junction Temperature (Tj): 200 °C
    • Transition Frequency (ft): 10 MHz

    New Old Stock * No longer available for export
    MFR: GE/RCA
    SKU: 2N6246

  10. DU1260T Philips RF Power MOSFET Transistor 60W 2-175MHz 12V (NOS)

    DU1260T Philips RF Power MOSFET Transistor 60W 2-175MHz 12V (NOS)

    $44.91

    • N-Channel enhancement mode device
    • DMOS structure
    • Lower capacitances for broadband operation
    • High saturated output power
    • Lower noise figure than bipolar devices
    • Specifically designed for 12 volt applications 

    New  Old Stock * No longer available for export
    MFR: Philips Electronics
    SKU: DU1260T-PHI

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