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Transistors - RF, Mosfets, Misc.

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  1. PT4273 TRW RF Power Transistor 173MHz (NOS)

    PT4273 TRW RF Power Transistor 173MHz (NOS)

    $29.90

    PT4273 TRW RF Power Transistor 173MHz (NOS)

    New Old Stock * No longer available for export
    MFR: TRW
    SKU: PT4273

  2. 4N25 Toshiba 6 Pin Dip Optoisolaters Transistor (NOS)

    4N25 Toshiba 6 Pin Dip Optoisolaters Transistor (NOS)

    $0.31

    The 4N25 device consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector.

    •  Most Economical Optoisolator Choice for Medium Speed, Switching Applications
    •  Meets or Exceeds All JEDEC Registered Specifications

    New Old Stock
    MFR: Toshiba
    SKU: 4N25

  3. D45H2 General Electric PNP Expitaxial Silicon Transistor (NOS)

    D45H2 General Electric PNP Expitaxial Silicon Transistor (NOS)

    $2.90

    • Maximum Collector-Base Voltage |Vcb|: 30 V
    • Transition Frequency (ft): 20 MHz

    New Old Stock * No longer available for export
    MFR: General Electric
    SKU: D45H2

  4. IRF510 N-Channel Power MOSFET Transistor 5.6A 100V 0.540 Ohm

    IRF510 N-Channel Power MOSFET Transistor 5.6A 100V 0.540 Ohm

    $1.91

    IRF510 Transistor, 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET

  5. MRF171A M/A-COM Transistor RF MOSFET 45W 150MHz 28V (NOS)

    MRF171A M/A-COM Transistor RF MOSFET 45W 150MHz 28V (NOS)

    $43.90

    Designed primarily for wideband large–signal output and driver stages from 30–200 MHz, N–Channel enhancement mode MOSFET

    • Guaranteed performance at 150 MHz, 28 Vdc, Output power = 45 W, Power gain = 17 dB (min), Efficiency = 60% (min)
    • Excellent thermal stability, ideally suited for Class A operation
    • Facilitates manual gain control, ALC and modulation techniques
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR
    • Low Crss – 8 pF @ VDS = 28 V
    • Gold top metal, Typical data for power amplifier applications in industrial, commercial and amateur radio equipment
    • Typical performance at 30 MHz, 28 Vdc, Output power = 30 W (PEP), Power gain = 20 dB (typ.), Efficiency = 50% (typ.), IMD(d3) (30 W PEP) –32 dB (typ.)

    Parts we have available are early version just after Motorola sold to M/A-COM.  All parts in stock are produced with original Motorola die. 

    New Old Stock * No longer available for export
    MFR: M/A-COM
    SKU: MRF171A-MA

  6. QBH-105 Q-Bit RF Amplifier 0.5W 5-300 MHz (NOS)

    QBH-105 Q-Bit RF Amplifier 0.5W 5-300 MHz (NOS)

    $14.91

    • High Gain: 12.2dB Typical
    • DC Voltage: +19V
    • Continuous RF Input Power: +13 dBm

    New Old Stock
    MFR: Q-BIT Corporation
    SKU: QBH-105

  7. QBH-110 Q-Bit RF Amplifier 0.5W 5-500MHz (NOS)

    QBH-110 Q-Bit RF Amplifier 0.5W 5-500MHz (NOS)

    $14.91

    • High Gain: 15.0dB Typical
    • DC Voltage: +17V
    • Continuous RF Input Power: +13 dBm

    New Old Stock
    MFR: Q-BIT
    SKU: QBH-110

  8. QBH-118 Q-Bit RF Amplifier 0.5W 3-100MHz NOS)

    QBH-118 Q-Bit RF Amplifier 0.5W 3-100MHz NOS)

    $14.91

    • High Gain: 16.3 dB Typical
    • DC Voltage: +20V
    • Continuous RF Input Power: +13 dBm

    New Old Stock
    MFR: Q-BIT
    SKU: QBH-118

  9. SD148-2 Solid State Transistor (NOS)

    SD148-2 Solid State Transistor (NOS)

    $24.90

    SD148-2 Solid State Transistor (NOS)

    New Old Stock * No longer available for export
    MFR: Solid State Scientific
    SKU: SD148-2

  10. 2SC2782A Toshiba NPN Silicon Epitaxial Planar Transistor Matched Pair (2) (NOS)

    2SC2782A Toshiba NPN Silicon Epitaxial Planar Transistor Matched Pair (2) (NOS)

    $129.91

    The 2SC2782A is an NPN bipolar junction transistor (BJT) designed and manufactured by Toshiba Corporation. It is a silicon epitaxial planar transistor that is commonly used in various electronic applications, particularly in high-frequency and high-power amplifier circuits.

    The 2SC2782A transistor is a high-quality and reliable component that offers excellent performance in a wide range of electronic applications. Its high current gain, low noise figure, high cutoff frequency, and low parasitic capacitance make it a popular choice for use in various high-frequency and high-power amplifier circuits.

    For a Matched Quad (4), simply order Two Pairs
    MFR: Toshiba, Japan
    New Old Stock * No Longer Available for Export
    SKU: 2SC2782A-MP

Items 1 to 10 of 1547 total

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