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RD

Mitsubishi RD Series - Silicon RF devices are widely used in portable wireless communication devices that operate in the frequency band under 1GHz in order to amplify their transmission power. Mitsubishi Silicon RF devices which are the key parts for amplifying power of the transmission stage of mobile wireless communication devices in the high frequency band from several MHz to 1GHz robustly support wireless communication networks with a wide range of product lineup such as mobile professional radio equipment for public agency use, amateur radio equipment, and the onboard vehicle telematics market.

* Indicates limited quantity / discontinued item.  Check with Sales Staff for available quantity.

PART NUMBER Vdd (V) f (MHz) Pout(W) Package
RD00HHS1 * 12.5 30 0.3 SOT-89
RD00HVS1 * 1.5 175 0.5 SOT-89
RD01MUS1 * 7.2 520 0.8 SOT-89
RD01MUS2 7.2 520 0.8 SOT-89
RD01MUS2B * 7.2 527 1 SOT-89
RD02MUS1 * 7.2 175 / 520 2 SOT-89
RD02MUS1B * 7.2 175 / 520 2 SOT-89
RD05MMP1 7.2 941 5.5 PMM
RD06HHF1 12.5 30 6 TO-220S
RD06HVF1 12.5 175 6 TO-220S
RD07MUS2B 7.2 175 / 527 / 870 7 SLP
RD07MVS1 7.2 175 / 520 7 SLP
RD07MVS1B * 7.2 175 / 520 7 SLP
RD07MVS2 * 7.2 175 / 520 7 SLP
RD09MUP2 7.2 520 8 PMM
RD100HHF1 12.5 30 100 CERAMIC (LARGE)
RD12MVS1 7.2 175 11.5 SLP
RD15HVF1 12.5 175 15 TO-220S
RD16HHF1 12.5 30 16 TO-220S
RD20HMF1 * 12.5 900 20 CERAMIC (SMALL)
RD30HVF1 * 12.5 175 30 CERAMIC (SMALL)
RD30HUF1 * 12.5 520 30 CERMAIC (SMALL)
RD35HUF2 12.5 175 / 530 45 / 43 TYP. HPM
RD35HUP2 12.5 175 / 530 35 HPM
RD45HMF1 * 12.5 900 45 CERAMIC (LARGE)
RD60HUF1 12.5 520 60 CERAMIC ( LARGE)
RD70HUF2 12.5 175 / 530 84 / 75 TYP. HPM
RD70HVF1 12.5 175 / 520 70 / 50 CERAMIC (LARGE)

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  1. RD00HHS1 MITSUBISHI Silicon (Discrete) MOSFET RF Power Transistor 30 MHz, 0.3W

    RD00HHS1 MITSUBISHI Silicon (Discrete) MOSFET RF Power Transistor 30 MHz, 0.3W

    $3.91

    DESCRIPTION

    RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications.

    FEATURES
    High power gain
    Pout>0.3W, Gp>19dB @Vdd=12.5V ,f=30 MHz

    APPLICATION
    For output stage of high power amplifiers in HF Band mobile radio sets.

    RoHS COMPLIANT
    RD00HHS1-101,T113 is a RoHS compliant products. This product includes the lead in high melting temperature type solders.  However, it is applicable to the following exceptions of RoHS Directions.

    • Lead in high melting temperature type solders (i.e.tin-lead solder alloys containing more than 85% lead .

    New Old Stock * No longer available for export

    MFR: Mitsubishi (MFR #: RD00HHS1-101)

    SKU: RD00HHS1

  2. RD12MVS1 Transistor, Mitsubishi

    RD12MVS1 Transistor, Mitsubishi

    $5.95 As low as: $4.75

    RD12MVS1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W 

    MFR: Mitsubishi (MFR #: RD12MVS1-101)

  3. RD15HVF1-101 Mitsubishi Transistor 175MHz to 520MHz 15W

    RD15HVF1-101 Mitsubishi Transistor 175MHz to 520MHz 15W

    $11.91 As low as: $8.91

    RD15HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175 MHz - 520 MHz,15 Watts
    MFR: Mitsubishi, Japan (MFR #: RD15HVF1-101) 
    SKU: RD15HVF1-101

  4. RD16HHF1-501 Mitsubishi Silicon MOSFET Power Transistor16W 30 MHz 12.5V RoHS Compliant

    RD16HHF1-501 Mitsubishi Silicon MOSFET Power Transistor16W 30 MHz 12.5V RoHS Compliant

    $7.91 As low as: $4.91

    DESCRIPTION: RD16HHF1 is a MOS FET transistor specifically designed for HF, RF power amplifiers applications.

    FEATURES: High power gain: Pout>16 W, Gp>16 dB @Vdd=12.5 V,f=30 MHz.

    APPLICATION: For output stage of high power amplifiers in HF band.

    MFR: Mitsubishi, Japan

    SKU: RD16HHF1-501

  5. RD20HMF1 Transistor, 20 watt, 900 MHz, 12.5v, Mitsubishi

    RD20HMF1 Transistor, 20 watt, 900 MHz, 12.5v, Mitsubishi

    $31.95 As low as: $21.25

    RD20HMF1 RoHS Compliance, Silicon MOSFET Power Transistor,900MHz, 20W

     MFR: Mitsubishi (MFR #: RD20HMF1101)

  6. RD30HUF1 Transistor, 30 watt, 520 MHz, 12.5v, Mitsubishi

    RD30HUF1 Transistor, 30 watt, 520 MHz, 12.5v, Mitsubishi

    $23.95 As low as: $16.95

    RD30HUF1  Silicon MOSFET Power Transistor, 520MHz, 30W, RoHS Compliance

    MFR: Mitsubishi (MFR #: RD30HUF1-101)

    End of Life 2017, Limited Quantity Available, Not for Export

    See possible substitutes: RD35HUP2 or RD35HUF2

  7. RD30HVF1-101 Transistor, 30 watt, 175 MHz, 12.5v, Mitsubishi

    RD30HVF1-101 Transistor, 30 watt, 175 MHz, 12.5v, Mitsubishi

    $32.95

    RD30HVF1 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W, 12.5V, MFR: Mitsubishi (MFR #: RD30HVF1-101)

    Limited Quantity Available, New Old Stock, Not available for Export

    NOTE: DISCONTINUED 2017 

  8. RD45HMF1 Transistor, 45 watt, 900 MHz, 12.5v, Mitsubishi

    RD45HMF1 Transistor, 45 watt, 900 MHz, 12.5v, Mitsubishi

    $35.95 As low as: $25.25

    RD45HMF1 RoHS Compliance, Silicon MOSFET Power Transistor 900MHz, 45W, 12.5V

    MFR: Mitsubishi (MFR #: RD45HMF1-101)

  9. RD70HHF1 MITSUBISHI Silicon MOSFET Power Transistor 70W 30 MHz 12.5V (NOS)

    RD70HHF1 MITSUBISHI Silicon MOSFET Power Transistor 70W 30 MHz 12.5V (NOS)

    $250.91

    New Old Stock * No longer available for export  End Of Life 2017


    DESCRIPTION
    RD70HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.
    FEATURES
    High power and High Gain:  Pout>70W, Gp>13dB @Vdd=12.5V,f=30MHz  High Efficiency: 60%typ.on HF Band
    APPLICATION
    For output stage of high power amplifiers in HF
    Band mobile radio sets.
    RoHS COMPLIANT
    RD70HHF1-101 is a RoHS compliant products.  RoHS compliance is indicate by the letter “G” after the lot marking.

    MFR: Mitsubishi, Japan

    SKU: RD70HHF1

  10. RD70HVF1 Transistor, 70 watt, 175 MHz, 12.5v, Mitsubishi

    RD70HVF1 Transistor, 70 watt, 175 MHz, 12.5v, Mitsubishi

    $47.91

    RD70HVF1-101  Silicon MOSFET Power Transistor, RoHS Compliant, 175MHz 70W,  520MHz 50W, MFR: Mitsubishi 

    (MFR #: RD70HVF1-101)

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