RD12MVS1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
RD12MVS1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
High Power Gain: Pout>11.5W, Gp>12dB@Vdd=7.2V,f=175MHz High Efficiency: 57%typ. (175MHz)
For output stage of high power amplifiers in VHF band mobile radio sets.
RD12MVS1-101,T112 is a RoHS compliant products. RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high melting temperature type solders. However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e.tin-lead older alloys containing more than85% lead.)
|Made in the USA||No|