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RD06HHF1 Transistor, 6 watt, 30 MHz, 12.5v, Mitsubishi

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RD06HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz, 6W, MFR: Mitsubishi (MFR #: RD06HHF1-101)


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RD06HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz, 6W

MFR: Mitsubishi

RD06HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.

High power gain: Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz

For output stage of high power amplifiers in HF band mobile radio sets.

RD06HHF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the lot marking.
This product include the lead in high melting temperaturetype solders.
However,it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)

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Additional Information

Featured Product No
Made in the USA No
Manufacturer Mitsubishi
Manufacturer Name Mitsubishi

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