RD20HMF1 RoHS Compliance, Silicon MOSFET Power Transistor,900MHz, 20W
RD20HMF1 is a MOS FET type transistor specifically designed for 900MHz-band RF power amplifiers applications.
High power gain: Pout>20W, Gp>8.2dB @Vdd=12.5V,f=900MHz High Efficiency: 55%typ.
For output stage of high power amplifiers in 900MHz band Mobile radio sets.
RD20HMF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the Lot Marking.
|Made in the USA||N/A|