RD06HVF1 Mitsubishi Silicon MOSFET Power Transistor 175 MHz 6W (NOS)
- RD06HVF1 is a MOS FET type transistor specifically designed for VHF, RF power amplifier applications.
- High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz
- For output stage of high power amplifiers in VHF band mobile radio sets.
- RD06HVF1-101 is a RoHS compliant. RoHS compliance is indicate by the letter “G” after the lot marking.
New Old Stock * No longer available for export
MFR: Mitsubishi, Japan
|Made in the USA||No|
|Call For Price||No|