Details
RD06HVF1 Mitsubishi Silicon MOSFET Power Transistor 175 MHz 6W (NOS)
- RD06HVF1 is a MOS FET type transistor specifically designed for VHF, RF power amplifier applications.
- High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz
- For output stage of high power amplifiers in VHF band mobile radio sets.
- RD06HVF1-101 is a RoHS compliant. RoHS compliance is indicate by the letter “G” after the lot marking.
New Old Stock * No longer available for export
MFR: Mitsubishi, Japan
Additional Information
| Featured Product | No |
|---|---|
| Made in the USA | No |
| GTIN | No |
| ISBN | No |
| NATO Stock Number | No |
| Manufacturer Part Number | No |
| Manufacturer | Mitsubishi |
| Condition | New |
| NOS | No |
| Call For Price | No |
| Manufacturer Name | Mitsubishi |
Product Attachments
| rd06hvf1 |  538.24 KB |
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