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RD35HUP2-501 Transistor, 35 watt, 175/530 MHz, 12.5v, Mitsubishi

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RD35HUP2-501 RoHS Compliance, Silicon MOSFET Power Transistor,175 / 530 MHz, 35 Watt, MFR: Mitsubishi


NOTE: Substitute for RD30HVF1


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Details

RD35HUP2-501 RoHS Compliance, Silicon MOSFET Power Transistor,175 / 530 MHz, 35 Watt

MFR: Mitsubishi

NOTE: SUBSTITUTE FOR RD30HVF1

 

ParameterLevelValueUnit
Supply situation   Under development  
Drain Voltage Typ 12.5 V
Freqency   175 / 530 MHz
Output Power (Min)   35(typ) W
Package   HPM  
Input Power (Typ)   3 W
Drain Efficiency (Min)   55(typ) %
Feature   built in Gate Protection Diode  
RoHS Directive   2011/65/EU RoHS2 Compliant

 

Additional Information

Featured Product No
Made in the USA No
Manufacturer No
Manufacturer Name Mitsubishi

Product Attachments

RD35HUF2 pdf 993.32 KB Download

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