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RD

Mitsubishi RD Series - Silicon RF devices are widely used in portable wireless communication devices that operate in the frequency band under 1GHz in order to amplify their transmission power. Mitsubishi Silicon RF devices which are the key parts for amplifying power of the transmission stage of mobile wireless communication devices in the high frequency band from several MHz to 1GHz robustly support wireless communication networks with a wide range of product lineup such as mobile professional radio equipment for public agency use, amateur radio equipment, and the onboard vehicle telematics market.

* Indicates limited quantity / discontinued item.  Check with Sales Staff for available quantity.

PART NUMBER Vdd (V) f (MHz) Pout(W) Package
RD00HHS1 * 12.5 30 0.3 SOT-89
RD00HVS1 * 1.5 175 0.5 SOT-89
RD01MUS1 * 7.2 520 0.8 SOT-89
RD01MUS2 7.2 520 0.8 SOT-89
RD01MUS2B * 7.2 527 1 SOT-89
RD02MUS1 * 7.2 175 / 520 2 SOT-89
RD02MUS1B * 7.2 175 / 520 2 SOT-89
RD05MMP1 7.2 941 5.5 PMM
RD06HHF1 12.5 30 6 TO-220S
RD06HVF1 12.5 175 6 TO-220S
RD07MUS2B 7.2 175 / 527 / 870 7 SLP
RD07MVS1 7.2 175 / 520 7 SLP
RD07MVS1B * 7.2 175 / 520 7 SLP
RD07MVS2 * 7.2 175 / 520 7 SLP
RD09MUP2 7.2 520 8 PMM
RD100HHF1 12.5 30 100 CERAMIC (LARGE)
RD12MVS1 7.2 175 11.5 SLP
RD15HVF1 12.5 175 15 TO-220S
RD16HHF1 12.5 30 16 TO-220S
RD20HMF1 * 12.5 900 20 CERAMIC (SMALL)
RD30HVF1 * 12.5 175 30 CERAMIC (SMALL)
RD30HUF1 * 12.5 520 30 CERMAIC (SMALL)
RD35HUF2 12.5 175 / 530 45 / 43 TYP. HPM
RD35HUP2 12.5 175 / 530 35 HPM
RD45HMF1 * 12.5 900 45 CERAMIC (LARGE)
RD60HUF1 12.5 520 60 CERAMIC ( LARGE)
RD70HUF2 12.5 175 / 530 84 / 75 TYP. HPM
RD70HVF1 12.5 175 / 520 70 / 50 CERAMIC (LARGE)

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  1. RD07MVS2 Mitsubishi Transistor Silicon MOSFET 7 Watt 175/520 MHz (NOS)

    RD07MVS2 Mitsubishi Transistor Silicon MOSFET 7 Watt 175/520 MHz (NOS)

    RoHS Compliance Silicon MOSFET Power Transistor 175MHz 520MHz 7W
    New Old Stock * No longer available for export
    MFR: Mitsubishi
    SKU: RD07MVS2-T112

  2. RD70HUF2-501 Mitsubishi Transistor 70W 520 MHz 12.5V

    RD70HUF2-501 Mitsubishi Transistor 70W 520 MHz 12.5V

    Transistor 70 Watts 520 MHz 12.5 Volts

    This MOS FET type transistor was specifically designed for VHF/UHF RF power amplifiers applications and for output stage of high power amplifiers in VHF/UHF band mobile radio sets. RoHS Compliant

    MFR #: RD70HUF2-501
    MFR: Mitsubishi
    SKU: RD70HUF2

    Expected delivery is end of January 2022.

  3. RD35HUP2-501 Mitsubishi Transistor 35 Watt 175/530MHz 12.5 Volts

    RD35HUP2-501 Mitsubishi Transistor 35 Watt 175/530MHz 12.5 Volts

    RoHS Compliance Silicon MOSFET Power Transistor 175/530 MHz 35 Watt 
    NOTE: Substitute for RD30HVF1
    MFR: Mitsubishi
    SKU: RD35HUP2-501

  4. RD60HUF1C-501 Mitsubishi Transistor 60 Watt 520 MHz 12.5 Volts

    RD60HUF1C-501 Mitsubishi Transistor 60 Watt 520 MHz 12.5 Volts

    RoHS Compliance Silicon MOSFET Power Transistor
    520MHz, 60W
    MFR: Mitsubishi 
    MFR #: RD60HUF1C-501
    SKU: RD60HUF1C-501

  5. RD100HHF1C-501 Mitsubishi MOSFET Silicon Power Transistor 30MHz 100W 12.5V

    RD100HHF1C-501 Mitsubishi MOSFET Silicon Power Transistor 30MHz 100W 12.5V

    MOSFET Power Transistor 30MHz 100 Watts 12.5 Volts
    RoHS Compliant
    MFR: Mitsubishi, Japan
    SKU: RD100HHF1C-501

  6. RD15HVF1-501 Mitsubishi MOSFET RF Power Transistor 175 MHz 15W

    RD15HVF1-501 Mitsubishi MOSFET RF Power Transistor 175 MHz 15W

    MOSFET Silicon Power Transistor 175MHz - 520MHz 15W
    RoHS Compliant
    MFR #: RD15HVF1-501
    MFR: Mitsubishi, Japan
    SKU: RD15HVF1-501

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