RD70HVF1C-501 Mitsubishi Silicon MOSFET Power Transistor 175MHz 70W / 520MHz 50W

The RD70HVF1C-501 is a Mitsubishi silicon MOSFET power transistor that is designed for use in high-frequency power amplifier circuits. This transistor is specifically designed for use in the VHF and UHF frequency ranges, with a frequency range of 136-174 MHz and 400-520 MHz, respectively.

The transistor is designed to operate with a maximum collector-emitter voltage (Vce) of 12.5 volts and a maximum collector current (Ic) of 12 amps. It is capable of delivering up to 70 watts of power output at a frequency of 175 MHz, and up to 50 watts at a frequency of 520 MHz.

The RD70HVF1C-501 transistor uses a metal oxide semiconductor field-effect transistor (MOSFET) technology to amplify and control the flow of electrical signals. It is designed to operate in a Class AB mode, which means it provides high efficiency while maintaining low distortion.

The transistor also features a built-in matching circuit, which simplifies the design process and reduces the number of external components required for its operation. Additionally, it is designed with a ceramic package, which provides high reliability and stability over a wide temperature range.

The RD70HVF1C-501 transistor is a high-performance and reliable component that offers excellent performance in a wide range of VHF and UHF power amplifier applications. Its high power output, frequency range, and built-in matching circuit make it a popular choice for use in various radio communication systems, including amateur radio, commercial radio, and military radio systems.