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RD07MUS2B Mitsubishi Transistor (NOS)

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RD07MUS2B-T112 is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications.
RoHS COMPLIANT
New Old Stock * No longer available for export
MFR: Mitsubishi
SKU: RD07MUS2B


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Details

RD07MUS2B Mitsubishi Transistor (NOS)

RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications.  For output stage of high power amplifiers in VHF/UHF/800MHz-band mobile radio sets.  RoHS COMPLIANT

High power gain and High Efficiency. Typical Po Gp ηD
(175MHz) 7.2W 13.8dB 65%
(527MHz) 8W 13.0dB 63%
(870MHz) 7W 11.5dB 58%
Integrated gate protection diode.

New Old Stock * No longer available for export
MFR: Mitsubishi

Additional Information

Featured Product No
Made in the USA No
Manufacturer Mitsubishi
NOS No
Call For Price No
Manufacturer Name Mitsubishi

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