Details
RD07MUS2B Mitsubishi Transistor (NOS)
RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications. For output stage of high power amplifiers in VHF/UHF/800MHz-band mobile radio sets. RoHS COMPLIANT
High power gain and High Efficiency. Typical Po Gp ηD
(175MHz) 7.2W 13.8dB 65%
(527MHz) 8W 13.0dB 63%
(870MHz) 7W 11.5dB 58%
Integrated gate protection diode.
New Old Stock * No longer available for export
MFR: Mitsubishi
Additional Information
Featured Product | No |
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Made in the USA | No |
GTIN | No |
ISBN | No |
NATO Stock Number | No |
Manufacturer Part Number | No |
Manufacturer | Mitsubishi |
Condition | New |
NOS | No |
Call For Price | No |
Manufacturer Name | Mitsubishi |