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RD07MUS2B Transistor, 7w, Surface Mount, Mitsubishi

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RD07MUS2B RoHS Compliance,Silicon MOSFET Power Transistor,175MHz, 527MHz, 870MHz, 7W,  MFR: Mitsubishi (MFR #: RD07MUS2B-101)


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Details

RD07MUS2B RoHS Compliance,Silicon MOSFET Power Transistor,175MHz, 527MHz, 870MHz, 7W

MFR: Mitsubishi

DESCRIPTION
RD07MUS2B of RoHS-compliant product is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications.

FEATURES
High power gain and High Efficiency. Typical Po Gp ηD
(175MHz) 7.2W 13.8dB 65%
(527MHz) 8W 13.0dB 63%
(870MHz) 7W 11.5dB 58%
Integrated gate protection diode.

APPLICATION
For output stage of high power amplifiers in VHF/UHF/800MHz-band mobile radio sets.

RoHS COMPLIANT
RD07MUS2B is a RoHS compliant product. RoHS compliance is indicating by the letter “ZG” after the Lot Marking.

 

Additional Information

Made in the USA N/A
Manufacturer N/A

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