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RD09MUP2-501 Transistor, Mitsubishi

RD09MUP2-501 Transistor, Mitsubishi
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RD09MUP2 RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W 


MFR: Mitsubishi (MFR #: RD09MUP2-101)


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Details

RD09MUP2-501 RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W

MFR: Mitsubishi

DESCRIPTION
RD09MUP2 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.

FEATURES
•High power gain: Pout>8W, Gp>10dB@Vdd=7.2V,f=520MHz
•High Efficiency: 50%min. (520MHz)
•Integrated gate protection diode

APPLICATION
For output stage of high power amplifiers in UHF band mobile radio sets.

RoHS COMPLIANT
RD09MUP2 is a RoHS compliant product. RoHS compliance is indicating by the letter “G” after the Lot Marking.
This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e. tin-lead older alloys containing more than 85% lead.)

 

Additional Information

Made in the USA No
Manufacturer No

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