1-800-RFPARTS (1-800-737-2787) 1-760—744-0700 (USA) ORDERS: rfp@rfparts.com 435 S PACIFIC ST SAN MARCOS, CA 92078

RD07MVS2 Transistor, Mitsubishi

  • Buy 10 for $4.35 each and save 13%
  • Buy 25 for $3.95 each and save 21%
  • Buy 100 for $3.75 each and save 25%
  • Buy 250 for $3.45 each and save 31%
In Stock

RD07MVS2 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz, 7W, MFR: Mitsubishi (MFR #: RD07MVS2-101)

Be the first to review this product


RD07MVS2 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz, 7W

MFR: Mitsubishi


RD07MVS2 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications. This device has an internal monolithic zener
diode from gate to source for ESD protection.

High power gain: Pout>7W, Gp>10dB@Vdd=7.2V,f=520MHz High Efficiency: 60%typ. (175MHz) High Efficiency: 55%typ. (520MHz)
Integrated gate protection diode

For output stage of high power amplifiers In VHF/UHF band mobile radio sets.

RD07MVS2-101,T112 is a RoHS compliant products. RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high melting temperature type solders. However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e.tin-lead solder alloys containing more than85% lead.)


Additional Information

Featured Product N/A
Made in the USA N/A
Manufacturer Mitsubishi

Product Attachments

View Filerd07mvs2    Size: (468.91 KB)

Product Tags

Use spaces to separate tags. Use single quotes (') for phrases.