RD70HVF1-101 Mitsubishi Transistor 70 Watt 175 MHz 12.5V (NOS)

The RD70HVF1-101 is a Mitsubishi RF power transistor that is designed for use in high-frequency power amplifier circuits. This transistor is specifically designed for use in the VHF frequency range, with a frequency range of 136-174 MHz.

The transistor is designed to operate with a maximum collector-emitter voltage (Vce) of 12.5 volts and a maximum collector current (Ic) of 12 amps. It is capable of delivering up to 70 watts of power output at a frequency of 175 MHz. The RD70HVF1-101 transistor is a silicon MOSFET transistor, which means it uses a metal oxide semiconductor field-effect transistor (MOSFET) technology to amplify and control the flow of electrical signals.

This transistor is designed to operate in a Class AB mode, which means it provides high efficiency while maintaining low distortion. It is also designed with a built-in matching circuit, which simplifies the design process and reduces the number of external components required for its operation.

The RD70HVF1-101 transistor is a high-performance and reliable component that offers excellent performance in a wide range of VHF power amplifier applications. Its high power output, frequency range, and built-in matching circuit make it a popular choice for use in various radio communication systems, including amateur radio, commercial radio, and military radio systems.