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RD07MVS1 Transistor, Mitsubishi

RD07MVS1 Transistor, Mitsubishi
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RD07MVS1 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz, 7W MFR: Mitsubishi (MFR #: RD07MVS1-101)


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Details

RD07MVS1 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz, 7W

MFR: Mitsubishi

DESCRIPTION
RD07MVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.

FEATURES
High power gain: Pout>7W, Gp>10dB@Vdd=7.2V,f=520MHz High Efficiency: 60%typ. (175MHz) High Efficiency: 55%typ. (520MHz)

APPLICATION
For output stage of high power amplifiers in VHF/UHF band mobile radio sets.

RoHS COMPLIANT
RD07MVS1-101, T112 is a RoHS compliant product. RoHS compliance is indicating by the letter “G” after the Lot Marking.
This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)


Additional Information

Made in the USA No
Manufacturer No

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