RD01MUS2-T113 Mitsubishi RoHS Compliance Silicon MOSFET Power Transistor 520MHz 1W (NOS)
New Old Stock * No longer available for export
RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. This device has an internal monolithic zener diode from gate to source for ESD protection.
•High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz
•High Efficiency: 65%typ.
•Integrated gate protection diode
For output stage of high power amplifiers in VHF/UHF Band mobile radio sets.
RD01MUS2-101,T113 is a RoHS compliant products. This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1. Lead in high melting temperature type solders (i.e.tin-lead solder alloys containing more than85% lead)
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