RD70HUF2-501 Mitsubishi Transistor 70W 520 MHz 12.5V
RD70HUF2 is MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.
1. Supply with Tape and Reel. 500 Units per Reel
2. Employing Mold Package
3. High Power and High Efficiency Pout=75Wtyp, Drain Effi.=64%typ @ Vds=12.5V Idq=1.0A Pin=5.5W f=530MHz Pout=84Wtyp, Drain Effi.=74%typ
@ Vds=12.5V Idq=1.0A Pin=4.0W f=175MHz
4. Integrated gate protection diode
For output stage of high power amplifiers in VHF/UHF band mobile radio sets.
RD70HUF2 is a RoHS compliant product. RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high melting temperature type solders. However, it is applicable to the following exceptions of RoHS Directions.
Lead in high melting temperature type solders. (i.e. tin-lead solder alloys containing more than 85% lead.)
|Made in the USA||No|
|Call For Price||No|