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RD70HUF2-501 Mitsubishi Transistor 70W 520 MHz 12.5V

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Transistor 70 Watts 520 MHz 12.5 Volts


This MOS FET type transistor was specifically designed for VHF/UHF RF power amplifiers applications and for output stage of high power amplifiers in VHF/UHF band mobile radio sets. RoHS Compliant


MFR #: RD70HUF2-501
MFR: Mitsubishi
SKU: RD70HUF2


Expected delivery is end of January 2022.


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Details

RD70HUF2-501 Mitsubishi Transistor 70W 520 MHz 12.5V

Description
RD70HUF2 is MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.

Features
1. Supply with Tape and Reel. 500 Units per Reel
2. Employing Mold Package
3. High Power and High Efficiency Pout=75Wtyp, Drain Effi.=64%typ @ Vds=12.5V Idq=1.0A Pin=5.5W f=530MHz Pout=84Wtyp, Drain Effi.=74%typ
@ Vds=12.5V Idq=1.0A Pin=4.0W f=175MHz
4. Integrated gate protection diode

Application
For output stage of high power amplifiers in VHF/UHF band mobile radio sets.

RoHS Compliant
RD70HUF2 is a RoHS compliant product. RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high melting temperature type solders. However, it is applicable to the following exceptions of RoHS Directions.

Lead in high melting temperature type solders. (i.e. tin-lead solder alloys containing more than 85% lead.)

MFR: Mitsubishi

Additional Information

Featured Product No
Made in the USA No
Manufacturer Mitsubishi
NOS No
Call For Price No
Manufacturer Name Mitsubishi

Product Attachments

rd70huf2 pdf 1.04 MB Download

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