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MRF/SRF/M Series

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  1. MRF177 M/A-COM RF MOSFET Transistor 100W 400MHz 28V

    MRF177 M/A-COM RF MOSFET Transistor 100W 400MHz 28V

    Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as a driver or output amplifier in push–pull configurations. Can be used in manual gain control, ALC and modulation circuits. N–Channel enhancement mode MOSFET.

    • Typical performance at 400 MHz, 28 V: Output power — 100 W, Gain — 12 dB, Efficiency — 60%
    • Low thermal resistance
    • Low Crss — 10 pF typ. @ VDS = 28 V
    • Ruggedness tested at rated output power
    • Nitride passivated die for enhanced reliability
    • Excellent thermal stability; suited for Class A operation

    MRF:  M/A-COM
    SKU: MRF177-MA

  2. MRF151G Motorola M/A-COM MOSFET Power Transistor 300W 50V 175 MHz Early Version (NOS)

    MRF151G Motorola M/A-COM MOSFET Power Transistor 300W 50V 175 MHz Early Version (NOS)

    $179.91

    The MRF151G MA/COM Transistor is an early version, produced with the Motorola die.

    Designed for broadband commercial and military  applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.

    New Old Stock * No longer available for export
    MFR: Motorola M/A-COM USA
    SKU: MRF151G-MA-M

  3. MRF151A M/A-COM RF Power Field-Effect Transistor 150W 50V 175MHz N-Channel Broadband MOSFET

    MRF151A M/A-COM RF Power Field-Effect Transistor 150W 50V 175MHz N-Channel Broadband MOSFET

    $118.91

    Designed for broadband commercial and military  applications at frequencies to 175 MHz. The high  power, high gain and broadband performance of this  device makes possible solid state transmitters for  FM broadcast or TV channel frequency bands.

    • Enhanced thermal performance
    • Higher power dissipation  Guaranteed Performance at 30 MHz, 50 V:
    • Output Power — 150 W
    • Gain — 18 dB (22 dB Typ)
    • Efficiency — 40%  Typical Performance at 175 MHz, 50 V:
    • Output Power — 150 W
    • Gain — 13 dB
    • Low Thermal Resistance
    • Ruggedness Tested at Rated Output Power
    • Nitride Passivated Die for Enhanced Reliability

    MFR: M/A-COM
    SKU: MRF151A-MA

  4. MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V

    MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V

    $76.91

    MRF150 RF Power FET Transistor 150W to 150MHz 50V M/A-COM
    TMOS Designed primarily for linear large-signal output stages up to 150 MHz.

    • Superior high order IMD  IMD(d3) (150W PEP): –32dB (Typ.)  IMD(d11) (150W PEP): –60dB (Typ.) 
    • Specified 50V, 30MHz characteristics  Output power = 150 Watts  Power gain = 17 dB (Typ.)  Efficiency = 45% (Typ.) 
    • 100% tested for load mismatch at all phase angles

    Applications

    • Aerospace and Defense
    • ISM 

    SKU: MRF150-MA

  5. MRF148A M/A-COM Linear RF Power FET 30W 175MHz 50V (NOS)

    MRF148A M/A-COM Linear RF Power FET 30W 175MHz 50V (NOS)

    Designed for power amplifier applications in industrial,  commercial and amateur radio equipment to 175MHz.

    New Old Stock * No longer available for export
    MFR: M/A-COM
    SKU: MRF148A-MA

  6. MRF141 M/A-COM Transistor RF Power FET 150W 175MHz 28V

    MRF141 M/A-COM Transistor RF Power FET 150W 175MHz 28V

    Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high  gain and broadband performance of this device is especially useful for FM broadcast or TV channel frequency  band solid state transmitters and amplifiers.

    • Guaranteed performance at 30 MHz, 28V:  Output power: 150W  Gain: 8dB (22dB Typ.)  Efficiency: 40%
    • Typical Performance at 175MHz, 50V:  Output Power: 150 W  Gain: 13 dB
    • Low thermal resistance
    • Ruggedness tested at rated output power
    • Nitride passivated die for enhanced reliability

    New Old Stock * No longer available for export
    MFR: M/A-COM
    SKU: MRF141-MA

  7. MRF141G M/A-COM Transistor RF Power FET 300W 175MHz 28V

    MRF141G M/A-COM Transistor RF Power FET 300W 175MHz 28V

    $265.91

    MRF141G Transistor, RF Power FET, 300W, 175MHz, 28V, MFR: M/A-COM  No longer available for Export, (NOS)

  8. MRF140 M/A-COM Transistor 150W 28V 150 MHz Matched Pair (2)

    MRF140 M/A-COM Transistor 150W 28V 150 MHz Matched Pair (2)

    $249.91

    Made with original Motorola Die

    Designed primarily for linear large–signal output stages up to  150 MHz frequency range.  N–Channel enhancement mode

    • Specified 28 volts, 30 MHz characteristics  Output power = 150 watts  Power gain = 15 dB (Typ.)  Efficiency = 40% (Typ.)
    • Superior high order IMD
    • MD(d3) (150 W PEP): –30 dB (Typ.)
    • IMD(d11) (150 W PEP): –60 dB (Typ.)
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR

    MFR: M/A-COM
    SKU: MRF140-MP-MA

  9. MRF140 M/A-COM Transistor 150W 28V 150 MHz

    MRF140 M/A-COM Transistor 150W 28V 150 MHz

    $125.91

    Made with original Motorola Die

    Designed primarily for linear large–signal output stages up to  150 MHz frequency range.  N–Channel enhancement mode

    • Specified 28 volts, 30 MHz characteristics  Output power = 150 watts  Power gain = 15 dB (Typ.)  Efficiency = 40% (Typ.)
    • Superior high order IMD
    • MD(d3) (150 W PEP): –30 dB (Typ.)
    • IMD(d11) (150 W PEP): –60 dB (Typ.)
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR

    MFR: M/A-COM
    SKU: MRF140-MA

  10. MRF137 M/A-COM Transistor 30W 28V 400 MHz

    MRF137 M/A-COM Transistor 30W 28V 400 MHz

    $51.91

    Designed for wideband large signal output and drive stages Product Image  up to 400 MHz range.  N–Channel enhancement mode

    • Guaranteed 28 V, 150 MHz performance  Output power = 30 W  Minimum gain = 13 dB  Efficiency — 60% (Typical)
    • Small– and large–signal characterization
    • Typical performance at 400 MHz, 28 Vdc, 30 W output = 7.7 dB gain
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR
    • Low noise figure — 1.5 dB (typ.) at 1.0 A, 150 MHz
    • Excellent thermal stability, ideally suited for Class A operation
    • Facilitates manual gain control, ALC and modulation techniques

    Limit, 10 per customer.

    MFR: M/A-COM

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