MRF/SRF/M Series

Made with original Motorola Die

Designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range.

• Guaranteed performance at 400 MHz, 28 Vdc
• Output power = 10 W
• Power gain = 12 dB min.
• Efficiency = 50% min.
• 100% tested for load mismatch at all phase angles with 30:1 VSWR
• Gold metallization system for high reliability
• Computer–controlled wirebonding gives consistent input Impedance

MRF: M/A-COM
SKU: MRF134-MA

Made with original Motorola Die

Designed for wideband large signal amplifier and oscillator applications  Up to 400 MHz range, in either single-ended or push-pull configuration. N–Channel enhancement mode

MFR: M/A-COM
SKU: MRF136Y-MA

Made with original Motorola Die

Designed primarily for linear large–signal output stages up to  150 MHz frequency range.  N–Channel enhancement mode

• Specified 28 volts, 30 MHz characteristics  Output power = 150 watts  Power gain = 15 dB (Typ.)  Efficiency = 40% (Typ.)
• Superior high order IMD
• MD(d3) (150 W PEP): –30 dB (Typ.)
• IMD(d11) (150 W PEP): –60 dB (Typ.)
• 100% tested for load mismatch at all phase angles with 30:1 VSWR

MFR: M/A-COM
SKU: MRF140-MA

• Ruggedness tested at rated output power
• Nitride passivated die for enhanced reliability
• Operating Frequency: 175 MHz
• Gain: 12 Db
• Output Power: 300 W

MFR: MA/COM
SKU: MRF141G-MA

Designed primarily for wideband large–signal output and driver stages to 30 – 500 MHz, N–Channel enhancement mode MOSFET

MFR: M/A-COM
SKU: MRF166W-MA

Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.  N–Channel enhancement mode MOSFET.

MRF: M/A-COM
SKU: MRF173CQ-MA

Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device make possible solid state transmitters for FM broadcast or TV channel frequency bands. N–Channel enhancement mode MOSFET.

MFR: M/A-COM
SKU: MRF173-MA

Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device make possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode MOSFET

MRF:  M/A-COM
SKU: MRF173MP-MA

TMOS Designed primarily for linear large-signal output stages up to 150 MHz.

• Superior high order IMD  IMD(d3) (150W PEP): –32dB (Typ.)  IMD(d11) (150W PEP): –60dB (Typ.) 
• Specified 50V, 30MHz characteristics  Output power = 150 Watts  Power gain = 17 dB (Typ.)  Efficiency = 45% (Typ.) 
• 100% tested for load mismatch at all phase angles

Applications

• Aerospace and Defense
• ISM 

MFR: M/A-COM
SKU:MRF150-MA-MP