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MRF500 Series

MRF5812-APT, MRF553-MOT, MRF581A-APT, MRF571 Transistor, MRF5943G-APT Transistor, apt, MRF5812-MOT Ic, surface mount motorola, MRF555-APT Transistor, apt, MRF557-MOT NPN Silicon RF Low Power Transistor, 12.5 V, 870 MHz, 1.5 W, Motorola, MRF557-APT RF and Microwave Discrete Low Power Transistor, 12.5 V, 870 MHz, 1.5 W, APT, MRF555-MOT Transistor, 12 volt, , MRF515 NPN Silicon High Frequency Transistor, 12.5 V, 470 MHz, 0.75 W, Motorola

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  1. MRF581A Microsemi RF and Microwave Discrete Low Power Transistor (NOS)

    MRF581A Microsemi RF and Microwave Discrete Low Power Transistor (NOS)

    $4.91

    Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.

    • Low Noise - 2.5 dB @ 500 MHZ
    • High Gain, Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz
    • Ftau - 5.0 GHz @ 10v, 75mA
    • Cost Effective MacroX Package

    New Old Stock * No longer available for export
    MFR: Microsemi
    SKU: MRF581A-MSC

  2. MRF544 APT NPN Silicon RF and Microwave Discrete Low Power Transistor (NOS)

    MRF544 APT NPN Silicon RF and Microwave Discrete Low Power Transistor (NOS)

    Designed primarily for use in high frequency and medium and high resolution color video display monitors as well as other applications requiring high breakdown characteristics.

    • Silicon NPN, high Frequency, high breakdown Transistor
    • Maximum Unilateral Gain = 13.5 dB (typ) @ f = 200 MHz
    • High Collector Base Breakdown Voltage - BVCBO = 100 V (min)
    • High FT - 1400 MHz

    New Old Stock * No longer available for export
    MFR: APT

  3. MRF545 APT RF and Microwave Discrete Low Power Transistor (NOS)

    MRF545 APT RF and Microwave Discrete Low Power Transistor (NOS)

    $4.91

    Designed primarily for use in high frequency and medium and high resolution color video display monitors as well as other applications requiring high breakdown characteristics.

    • Silicon PNP, high Frequency, high breakdown, Transistor
    • Maximum Unilateral Gain = 14 dB (typ) @ f = 200 MHz
    • High Collector Base Breakdown Voltage - BVCBO = 100 V (min)
    • High FT - 1400 MHz

    New Old Stock * No longer available for export
    MFR: Advanced Power Technology RF
    SKU: MRF545-APT

  4. MRF545 Microsemi RF and Microwave Discrete Low Power Transistor (NOS)

    MRF545 Microsemi RF and Microwave Discrete Low Power Transistor (NOS)

    Designed primarily for use in high frequency and medium and high resolution color video display monitors as well as other applications requiring high breakdown characteristics.

    • Silicon PNP, high Frequency, high breakdown, Transistor
    • Maximum Unilateral Gain = 14 dB (typ) @ f = 200 MHz
    • High Collector Base Breakdown Voltage - BVCBO = 100 V (min)
    • High FT - 1400 MHz

    No longer manufactured
    New Old Stock * No longer available for export
    MFR: Microsemi
    SKU: MRF545-MSC

  5. MRF553 Microsemi RF and Microwave Discrete Low Power Transistor 1.5 W 175 MHz 12.5 V (NOS)

    MRF553 Microsemi RF and Microwave Discrete Low Power Transistor 1.5 W 175 MHz 12.5 V (NOS)

    Designed primarily for wideband large signal stages in the VHF frequency range.

    • Specified @ 12.5 V, 175 MHz Characteristics: Output Power = 1.5 W, Minimum Gain = 11.5 dB, Efficiency 60% (Typ)
    • Cost Effective PowerMacro Package
    • Electroless Tin Plated Leads for Improved Solderability

    No longer manufactured
    New Old Stock * No longer available for export
    MFR: Microsemi
    MFR: MRF553-MSC

  6. MRF555 Microsemi RF and Microwave Discrete Low Power Transistor 12.5 V 470 MHz 1.5 W (NOS)

    MRF555 Microsemi RF and Microwave Discrete Low Power Transistor 12.5 V 470 MHz 1.5 W (NOS)

    $6.91

    Designed primarily for wideband large signal stages in the UHF frequency range.

    • Specified @ 12.5 V, 470 MHz Characteristics: Output Power = 1.5 W, Minimum Gain = 11 dB, Efficiency 60% (Typ)
    • Cost Effective PowerMacro Package
    • Electroless Tin Plated Leads for Improved Solderability

    New Old Stock * No longer available for export
    MFR: Microsemi

  7. MRF557 APT RF and Microwave Discrete Low Power Transistor 12.5 V 870 MHz 1.5 W (NOS)

    MRF557 APT RF and Microwave Discrete Low Power Transistor 12.5 V 870 MHz 1.5 W (NOS)

    Designed primarily for wideband large signal stages in the UHF frequency range.

    • Specified @ 12.5 V, 870 MHz Characteristics: Output Power = 1.5 W, Minimum Gain = 8 dB, Efficiency 60% (Typ)
    • Cost Effective PowerMacro Packa
    • Electroless Tin Plated Leads for Improved Solderability

    New Old Stock * No longer available for export
    MRF: APT
    SKU: MRF557-APT

  8. MRF557 Microsemi RF and Microwave Discrete Low Power Transistor (NOS)

    MRF557 Microsemi RF and Microwave Discrete Low Power Transistor (NOS)

    Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.

    • Low Noise - 2.5 dB @ 500 MHZ
    • Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz
    • Ftau - 5.0 GHz @ 10v, 75mA
    • Cost Effective MacroX Package

    New Old Stock * No longer available for export
    MFR: Microsemi
    SKU: MRF557-MSC

  9. MRF559 Microsemi RF and Microwave Discrete Low Power Transistor 0.5W 870 MHz 12V (NOS)

    MRF559 Microsemi RF and Microwave Discrete Low Power Transistor 0.5W 870 MHz 12V (NOS)

    $4.91

    Designed primarily for wideband large signal stages in the UHF frequency range.

    • Specified @ 12.5 V, 870 MHz Characteristics: Output Power = .5 W, Minimum Gain = 8.0 dB, Efficiency 50%
    • Cost Effective Macro X Package
    • Electroless Tin Plated Leads for Improved Solderability

    New Old Stock * No longer available for export
    MFR: Microsemi
    SKU: MRF559-MSC

  10. MRF581G Microsemi Transistor (NOS)

    MRF581G Microsemi Transistor (NOS)

    $3.91

    • Transistor Type: NPN
    • Voltage - Collector Emitter Breakdown (Max): 18V
    • Frequency - Transition: 5GHz
    • Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz
    • Gain: 13dB ~ 15.5dB
    • Power - Max: 1.25W
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
    • Current - Collector (Ic) (Max): 200mA
    • Operating Temperature: 150°C (TJ)
    • Mounting Type: Surface Mount

    No longer manufactured
    New Old Stock * No longer available for export
    MFR: Microsemi
    SKU: MRF581G-MSC

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