MRF581A Microsemi RF and Microwave Discrete Low Power Transistor (NOS)
In Stock
$4.91
Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.
- Low Noise - 2.5 dB @ 500 MHZ
- High Gain, Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz
- Ftau - 5.0 GHz @ 10v, 75mA
- Cost Effective MacroX Package
New Old Stock * No longer available for export
MFR: Microsemi
SKU: MRF581A-MSC
Details
MRF581A Microsemi RF and Microwave Discrete Low Power Transistor (NOS)
Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.
- Low Noise - 2.5 dB @ 500 MHZ
- High Gain, Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz
- Ftau - 5.0 GHz @ 10v, 75mA
- Cost Effective MacroX Package
New Old Stock * No longer available for export
MFR: Microsemi
Additional Information
| Featured Product | No |
|---|---|
| Made in the USA | No |
| GTIN | N/A |
| ISBN | N/A |
| NATO Stock Number | N/A |
| Manufacturer Part Number | N/A |
| Manufacturer | No |
| Condition | New |
| NOS | No |
| Call For Price | No |
| Manufacturer Name | Microsemi |
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