MRF544 NPN Silicon RF and Microwave Discrete Low Power Transistor, APT
Designed primarily for use in high frequency and medium and high resolution color video display monitors as well as other applications requiring high breakdown characteristics.
- Silicon NPN, high Frequency, high breakdown Transistor
- Maximum Unilateral Gain = 13.5 dB (typ) @ f = 200 MHz
- High Collector Base Breakdown Voltage - BVCBO = 100 V (min)
- High FT - 1400 MHz
|Made in the USA||N/A|
|Manufacturer||Advanced Power Technology|