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MRF557 APT RF and Microwave Discrete Low Power Transistor 12.5 V 870 MHz 1.5 W (NOS)

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Designed primarily for wideband large signal stages in the UHF frequency range.



  • Specified @ 12.5 V, 870 MHz Characteristics: Output Power = 1.5 W, Minimum Gain = 8 dB, Efficiency 60% (Typ)

  • Cost Effective PowerMacro Packa

  • Electroless Tin Plated Leads for Improved Solderability


New Old Stock * No longer available for export
MRF: APT
SKU: MRF557-APT


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Details

MRF557 APT RF and Microwave Discrete Low Power Transistor 12.5 V 870 MHz 1.5 W (NOS)

Designed primarily for wideband large signal stages in the UHF frequency range.

  • Specified @ 12.5 V, 870 MHz Characteristics: Output Power = 1.5 W, Minimum Gain = 8 dB, Efficiency 60% (Typ)
  • Cost Effective PowerMacro Packa
  • Electroless Tin Plated Leads for Improved Solderability

New Old Stock * No longer available for export
MRF: APT

 

 

Additional Information

Featured Product No
Made in the USA No
GTIN N/A
ISBN N/A
NATO Stock Number N/A
Manufacturer Part Number N/A
Manufacturer Advanced Power Technology
Condition New
NOS No
Call For Price No
Manufacturer Name FUTURE ELECTRONICS CORP

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