MRF559 Microsemi RF and Microwave Discrete Low Power Transistor 0.5W 870 MHz 12V (NOS)

MRF559 Microsemi RF and Microwave Discrete Low Power Transistor 0.5W 870MHz 12V (NOS)

Designed primarily for wideband large signal stages in the UHF frequency range.

• Specified @ 12.5 V, 870 MHz Characteristics: Output Power = .5 W, Minimum Gain = 8.0 dB, Efficiency 50%
• Cost Effective Macro X Package
• Electroless Tin Plated Leads for Improved Solderability

New Old Stock * No longer available for export
MFR: Microsemi