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RD07MVS1B Transistor, Mitsubishi

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RD07MVS1B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W MFR: Mitsubishi (MFR #: RD07MVS1B-101)

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RD07MVS1B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W

MFR: Mitsubishi


RD07MVS1B is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.
RD07MVS1B improved a drain surge than RD07MVS1 by optimizing MOSFET structure.

High power gain: Pout>7W, Gp>10dB @Vdd=7.2V,f=520MHz
High Efficiency: 60%typ. (175MHz) High Efficiency: 55%typ. (520MHz)

For output stage of high power amplifiers in VHF/UHF band mobile radio sets.


RD07MVS1B-101, T112 is a RoHS compliant product. RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high melting temperature type solders. However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)

Additional Information

Featured Product N/A
Made in the USA N/A
Manufacturer Mitsubishi

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