Transistors - RF, Mosfets, Misc.

Silicon N-channel enhancement mode vertical D-MOS transistor designed for SSB transmitter applications in the High Frequency range. The transistor is encapsulated in a 4-lead, SOT123A flange package, with a ceramic cap. All leads are isolated from the flange.

New Old Stock * No longer available for export
MFR: Philips, Philipines
SKU: BLF145-PH

BLF177  Ampleon HF/VHF power MOS transistor 
See BLF177-P1db 
Nw Old Stock * No longer available for Export
MFR: Ampleon

See Data Sheet for more information

The BLF177 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion.
• 150W with 22dB Typical Gain @ 30MHz, 50V
• 150W with 14dB Typical Gain @ 175MHz, 50V
MFR: P1dB
SKU: BLF177-P1dB-rfmw

See Data Sheet for more information

FEATURES

• High power gain
• Low noise figure
• Easy power control
• Good thermal stability
• Withstands full load mismatch
• Gold metallization ensures excellent reliability.

New Old Stock available * No longer available for export
MFR: NXP
SKU: BLF244-NXP

Dual silicon N-Channel enhancement mode vertical D-MOS push-pull transistor encapsulated in an 8-lead SOT161A balanced flange package with a ceramic cap. All leads are isolated from the flange.

Ruggedness in class-B operation, the BLF246B is capable of withstanding a load mismatch corresponding to VSWR = 50 : 1 through all phases under the following conditions: VDS = 28 V; f = 175 MHz at rated output power.

New Old Stock * No longer available for export
MFR: Philips
SKU: BLF246B

Data Sheet