Transistors - RF, Mosfets, Misc.

SKU: BLF145-NXP 

MFG: Philips, Philipines

Limited, New Old Stock * No longer available for export

The BLF177 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion.
• 150W with 22dB Typical Gain @ 30MHz, 50V
• 150W with 14dB Typical Gain @ 175MHz, 50V
MFR: P1dB
SKU: BLF177-P1dB-rfmw

See Data Sheet for more information

 FEATURES

• High power gain
• Low noise figure
• Easy power control
• Good thermal stability
• Withstands full load mismatch
• Gold metallization ensures excellent reliability.

SKU: BLF244-NXP

Limited, New Old Stock available * No longer available for export

BLF246B Philips VHF Push/Pull power MOS Transistor (NOS)

Dual silicon N-Channel enhancement mode vertical D-MOS push-pull transistor encapsulated in an 8-lead SOT161A balanced flange package with a ceramic cap. All leads are isolated from the flange.

Ruggedness in class-B operation, the BLF246B is capable of withstanding a load mismatch corresponding to VSWR = 50 : 1 through all phases under the following conditions: VDS = 28 V; f = 175 MHz at rated output power.

SKU: BLF246B

Limitied, New Old Stock available * No longer available for export