Details
D45H2 General Electric PNP Expitaxial Silicon Transistor (NOS)
For general purpose power applications and switching
- Maximum Collector Power Dissipation (Pc): 50 W
- Maximum Collector-Base Voltage |Vcb|: 30 V
- Maximum Collector-Emitter Voltage |Vce|: 30 V
- Maximum Emitter-Base Voltage |Veb|: 5 V
- Maximum Collector Current |Ic max|: 10 A
- Max. Operating Junction Temperature (Tj): 150 °C
- Transition Frequency (ft): 20 MHz
- Collector Capacitance (Cc): 400 pF
- Forward Current Transfer Ratio (hFE), MIN: 40
- Package: TOP66
New Old Stock * No longer available for export
MFR: General Electric
Additional Information
| Featured Product | No |
|---|---|
| Made in the USA | No |
| GTIN | No |
| ISBN | No |
| NATO Stock Number | No |
| Manufacturer Part Number | No |
| Manufacturer | No |
| Condition | New |
| NOS | No |
| Call For Price | No |
| Manufacturer Name | General Electric Company |
