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IRF510 N-Channel Power MOSFET Transistor 5.6A 100V 0.540 Ohm

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IRF510 Transistor, 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET

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IRF510 N-Channel Power MOSFET Transistor 5.6A 100V 0.540 Ohm 

This N-Channel enhancement mode silicon gate power field effect transistor, is an advanced power MOSFET.  It is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Additional Information

Featured Product No
Made in the USA No
NATO Stock Number N/A
Manufacturer Part Number N/A
Manufacturer No
Condition New
Call For Price No
Manufacturer Name International Rectifier

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