Details
2SC3019 Mitsubishi NPN Silicon Epitaxial Planar Transistor 12.5v 0.5W (NOS)
- For RF power amplifiers in UHF band.
- High Power Gain: 14dB
- Emitter ballasted construction for high reliability and good performance
- Small-disc-mold type package
- Collector dissipation: 0.6W
- Input/Output impedance: Zin = 2.6 - j3.0Ω, Zout = 16.5 - j56Ω @f=520MHz
New Old Stock * No longer aailable for export
MFR: Mitsubishi
Additional Information
| Featured Product | No |
|---|---|
| Made in the USA | No |
| GTIN | No |
| ISBN | No |
| NATO Stock Number | No |
| Manufacturer Part Number | No |
| Manufacturer | No |
| Condition | New |
| NOS | No |
| Call For Price | No |
| Manufacturer Name | Mitsubishi |
