Details
2SJ210 NEC MOS Field Effect Transistor (NOS)
The 2SJ210, P-channel vertical type MOSFET, is a switching device which can be driven directly by the output of ICs having a 5 volt power source.
Has excellent switching characteristics and is suitable as a high-speed switching device in digital circuits.
- Not necessary to consider driving current because of its high input impedance.
- Possible to reduce the number of parts by omitting the bias resistor.
- Drain to Source Voltage (VGS = 0 V) VDSS −60 V
- Gate to Source Voltage (VDS = 0 V) VGSS m20 V
- Drain Current (DC) ID(DC) m200 mA
- Drain Current (pulse) Note ID(pulse) m400 mA
- Total Power Dissipation PT 200 mW
- Channel Temperature Tch 150 °C
- Storage Temperature Tstg −55 to +150 °C
New Old Stock
MFR: NEC
Additional Information
| Featured Product | No |
|---|---|
| Made in the USA | No |
| GTIN | No |
| ISBN | No |
| NATO Stock Number | No |
| Manufacturer Part Number | No |
| Manufacturer | No |
| Condition | New |
| NOS | No |
| Call For Price | No |
| Manufacturer Name | NEC Corporation |
