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MRF151 RF Power Field-Effect Transistor, 150 W, 50 V, 175 MHz, N-Channel Broadband MOSFET, M/A-COM

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Description and Applications:



Designed for broadband commercial and military applications at frequencies to 175 MHz. The high
power, high gain and broadband performance of this device makes possible solid state transmitters for
FM broadcast or TV channel frequency bands.


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Details

MRF151 RF Power Field-Effect Transistor 150 W 50 V 175 MHz N-Channel Broadband M/A-COM Mosfet

MFR: M/A-COM

Features
Guaranteed Performance at 30 MHz, 50 V:
• Output Power — 150 W
• Gain — 18 dB (22 dB Typ)
• Efficiency — 40%
Typical Performance at 175 MHz, 50 V:
• Output Power — 150 W
• Gain — 13 dB
• Low Thermal Resistance
• Ruggedness Tested at Rated Output Power
• Nitride Passivated Die for Enhanced Reliability

Description and Applications
Designed for broadband commercial and military  applications at frequencies to 175 MHz. The high  power, high gain and broadband performance of this  device makes possible solid state transmitters for  FM broadcast or TV channel frequency bands.

Additional Information

Featured Product No
Made in the USA No
Manufacturer No
Manufacturer Name FIRST SOURCE INC.

Product Attachments

MRF151 pdf 345.16 KB Download

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