MRF313 M/A-COM NPN Silicon High-Frequency Transistor 1.0W 400MHz 28V (NOS)
Designed for wideband amplifier, driver or oscillator applications in military, mobile, and aircraft radio.
- Specified 28 V, 400 MHz characteristics — Output power = 1.0 W, Power gain = 15 dB min., Efficiency = 45% typ.
- Emitter ballast and low current density for improved MTBF
- Common emitter for improved stability
New Old Stock * No longer available for export
|Made in the USA||No|
|NATO Stock Number||N/A|
|Manufacturer Part Number||N/A|
|Call For Price||No|
|Manufacturer Name||FIRST SOURCE INC.|