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2N3771G ON Semiconductor Transistor NPN 40V 30A (NOS)

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High Power NPN Silicon Power Transistors These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications.


Features • Forward Biased Second Breakdown Current Capability IS/b = 3.75 Adc @ VCE = 40 Vdc − 2N3771 = 2.5 Adc @ VCE = 60 Vdc − 2N3772 • These Devices are Pb−Free and are RoHS Compliant


MFR: ON Semiconductors


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Details

2N3771G ON Semiconductor Transistor NPN 40 Volts 30 A Rohs Compliant CASE: TO-3

High Power NPN Silicon Power Transistors These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications.

Features • Forward Biased Second Breakdown Current Capability IS/b = 3.75 Adc @ VCE = 40 Vdc − 2N3771 = 2.5 Adc @ VCE = 60 Vdc − 2N3772 • These Devices are Pb−Free and are RoHS Compliant

New Old Stock

MFR: ON Semiconductors

Additional Information

Featured Product No
Made in the USA No
Manufacturer ON SEMI
NOS N/A
Call For Price No
Manufacturer Name FUTURE ELECTRONICS CORP

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