Details
2N3375 Microsemi Silicon NPN RF Power Transistor 250MHz (NOS)
Designed for Class A,B,C Amplifier,Oscillator and Driver Applications Covering the VHF-UHF Region.
- Maximum Collector Power Dissipation (Pc): 12 W
- Maximum Collector-Base Voltage |Vcb|: 65 V
- Maximum Collector-Emitter Voltage |Vce|: 40 V
- Maximum Emitter-Base Voltage |Veb|: 4 V
- Maximum Collector Current |Ic max|: 1.5 A
- Max. Operating Junction Temperature (Tj): 200 °C
- Transition Frequency (ft): 250 MHz
- Collector Capacitance (Cc): 10 pF
- Forward Current Transfer Ratio (hFE), MIN: 10
New Old Stock
MFR: Microsemi Corporation
Additional Information
| Featured Product | No |
|---|---|
| Made in the USA | No |
| GTIN | No |
| ISBN | No |
| NATO Stock Number | No |
| Manufacturer Part Number | No |
| Manufacturer | Microsemi |
| Condition | New |
| NOS | Yes |
| Call For Price | No |
| Manufacturer Name | Microsemi Corporation |
